【摘 要】
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Doping effect has been studied extensively in semiconductor material, the electrical properties of which could be tuned by introducing different type and concentration of dopants, while its still a ho
【机 构】
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Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, Berlin, Germany
【出 处】
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IUPAC 9th International Conference on Novel Materials and th
论文部分内容阅读
Doping effect has been studied extensively in semiconductor material, the electrical properties of which could be tuned by introducing different type and concentration of dopants, while its still a hot topic in heterogeneous catalysis.By means of scanning tunneling microscopy (STM), we are able to probe the electric activity of the individual dopants in the CaO films.1 Ring structures observed in STM images of a CaO thin film have been connected to temporary charging events of Mo donors embedded in the oxide lattice.
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