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5. MAGNETORESISTANCE IN SEMICONDUCTORS

MAGNETORESISTANCE IN SEMICONDUCTORS

来源 :中国科学院第七届海峡两岸及国际量子调控会议 | 被引量 : 0次 | 上传用户：shengchunquan

【摘 要】

：

Magnetoresistance (MR) reported in some non-magnetic semiconductors particularly silicon has triggered considerable interest owing to the large magnitude of the

【作 者】

：

Xiaozhong Zhang 

【机 构】

：

SchoolofMaterialsScienceandEngineering,TsinghuaUniversity,Beijing100084,China

【出 处】

：

中国科学院第七届海峡两岸及国际量子调控会议

【发表日期】

：

2013年6期

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Magnetoresistance (MR) reported in some non-magnetic semiconductors particularly silicon has triggered considerable interest owing to the large magnitude of the effect.Here we showed that MR in lightly doped n-Si can be significantly enhanced by introducing two diodes and proper design of the carrier path [1].

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