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5. Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientatio

Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientatio

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户：abc16900

【摘 要】

：

　　Atomic layer thin two dimensional material has attracted great attention since graphene was isolated by Geim and Novoselov in 2004.Hexagonal boron nitride(h

【作 者】

：

XiujuSong;ZhongfanLiu; 

【机 构】

：

Peking University,Beijing 100871,China

【出 处】

：

The 6th International Conference on Nanoscience and Technolo

【发表日期】

：

2015年期

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论文部分内容阅读

　　Atomic layer thin two dimensional material has attracted great attention since graphene was isolated by Geim and Novoselov in 2004.Hexagonal boron nitride(h-BN),an insulator with a large band gap(~5.97eV),possesses a similar lattice structure and a tiny lattice mismatch(1.7%)compared with graphene.

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