Electronic Transport Properties In GaS Two-Dimensional Nanostructures

来源 :2015台湾物理年会 | 被引量 : 0次 | 上传用户：duanluchao

【摘要】

：

　　We report the electronic transport properties in the Ⅲ-Ⅳ layer semiconductor of gallium sulfide(GaS)with different thicknesses grown by the chemical vapor

【作者】

：

陳家茂陳瑞山許宏彬何清華

【出处】

：

2015台湾物理年会

【发表日期】

：

2015年期

【关键词】

：

In GaS

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　　We report the electronic transport properties in the Ⅲ-Ⅳ layer semiconductor of gallium sulfide(GaS)with different thicknesses grown by the chemical vapor transport(CVT).

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Electronic Transport Properties In GaS Two-Dimensional Nanostructures

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