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Currently,extreme ultra-violet lithography (EUVL) is the major candidate of next generation lithography for below 25 nm technology node.
Patterning of SnO2 / SnTe binary mask structure for extreme ultra-violet lithography using inductive
【摘 要】
：
Currently,extreme ultra-violet lithography (EUVL) is the major candidate of next generation lithography for below 25 nm technology node.
【机 构】
：
Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon,Kyoungki-do
【出 处】
：
2011年第三届微电子及等离子体技术国际会议
【发表日期】
：
2011年期
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