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5. A Latency-Elastic and Fault-Tolerant Cache for Improving Performance and Reliability on Low Voltage

A Latency-Elastic and Fault-Tolerant Cache for Improving Performance and Reliability on Low Voltage

来源 :2015 International Symposium on VLSI Design, Automation and | 被引量 : 0次 | 上传用户：a522599301

【摘 要】

：

The ever-increasing transistor threshold-voltage Vth variation caused by process technologies shrink brings the performance and reliability issues in SRAM cells.To keep power limitations,scaling down

【作 者】

：

Yung-Hui Yu Po-Hao Wang Shang-Jen Tsai Tien-Fu Chen 

【机 构】

：

National Chiao Tung University,Taiwan

【出 处】

：

2015 International Symposium on VLSI Design, Automation and

【发表日期】

：

2015年5期

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论文部分内容阅读

The ever-increasing transistor threshold-voltage Vth variation caused by process technologies shrink brings the performance and reliability issues in SRAM cells.To keep power limitations,scaling down the supply voltage is inevitable in mobile devices and future chips.

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