strained-Si相关论文
<正>This paper describes an analytical model for bulk electron mobility in strained-Si layers as a function of strain.Ph......
,Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MO
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,Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFET
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An attempt has been made to give a detailed review of strained silicon technology.Various device models have been studie......
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
This paper describes an analytical model for bulk electron mobility in strained-Si layers as a function of strain.Phonon......
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生......
成功地试制出薄虚拟SiGe衬底上的应变Si pMOSFETs.利用分子束外延技术在100nm低温Si(LT-Si)缓冲层上生长的弛豫虚拟Si0.8Ge0.2衬底......
在研究分析弛豫SiGe衬底上的应变Si沟道NMOSFET纵向电势分布的基础上,建立了应变Si NMOSFET阈值电压模型,并利用该模型对不同的器......
<正>In the ultra-thin relaxed SiGe virtual substrates, a strained-Si channel p-type Metal Oxide Semiconductor Field Effe......
研究了应变Si沟道引入对薄膜全耗尽SOI MOSFET器件特性的影响，并分析了器件特性改进的物理机理。与传统的SOI MOSFET结构相比，器件的......
本文报道了利用有限元计算和动力学大角度会聚束电子衍射模拟的方法研究了应变硅场效应晶体管沟道中的应变分布。沟道压应变是利用......
提出了一个应变硅沟道电子迁移率解析模型．模型以应变张量为对象研究应变硅沟道电子迁移率，因此与工艺相独立；适用于施加双轴应力及〈......
成功地试制出薄虚拟SiGe衬底上的应变SipMOSFETs．利用分子束外延技术在100nm低温Si(LT-Si)缓冲层上生长的弛豫虚拟Si0.8Ge0.2衬底可......
In this paper, a charge sheet surface potential based model for strained-Si nMOSFETs is presented and validated with num......
