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本文采用微波等离子体化学气相沉积法(MPCVD),高纯N2(99.999%)和CH4(99.9%)作反应气体,在多晶Pt(99.99%)基片上沉积C3N4薄膜。X-射线能谱(EDX)分析结果表明N/C原子比为1.0～1.4,接近C3N4的化学比;X射线衍射谱说明薄膜主要由β和α-C3N4组成;FT-IR谱和Raman谱支持C-N键的存在。
In this paper, C3N4 thin films were deposited on polycrystalline Pt (99.99%) substrates by microwave plasma chemical vapor deposition (MPCVD), high purity N2 (99.999%) and CH4 (99.9%) as reaction gases. X-ray diffraction (EDX) analysis showed that the atomic ratio of N / C was 1.0-1.4, close to the chemical ratio of C3N4. X-ray diffraction analysis showed that the film mainly consisted of β and α-C3N4. FT- CN key exists.