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使用 J.A.Copeland 建议的二次谐波法直接描绘纵向载流子浓度分布的装置,描绘了 GaAs 低噪声场效应管所用的半绝缘衬底上带有缓冲层的亚微米掺杂外延的浓度分布。其结果与 C-V 自动描绘仪所绘分布进行了对比,认为作为此种材料的常规检验及优选是经济可用的。还介绍了装置的其它方面应用。实验发现:有的试样(GaAs,Si)存在着不同于纯属浅能级杂质浓度的分布描绘,对具有“口袋”形的分布描绘进行了讨论。
The use of the second harmonic method proposed by J.A.Copeland for direct plotting longitudinal carrier concentration profiles depicts the concentration profile of sub-micron doped epitaxy with a buffer layer on semi-insulating substrates used in GaAs low noise field effect transistors. The results are compared with those plotted with the C-V auto-tracer and are considered to be economically viable as routine tests and preferences for such materials. Other aspects of the device are also described. The experimental results show that some samples (GaAs, Si) have different profiles of impurity concentration than purely shallow energy levels, and the distribution of “pocket” shape is discussed.