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利用磁控溅射方法在n型Si衬底上制备了NiO:Na薄膜构成异质pn结,并研究了其光电特性。实验结果表明,当O2/Ar+O2比例从0%升高到30%时,Si/NiO:Na的pn结表现出最佳整流特性,正向开启电压达到4.9V,-7V时才出现漏电流。这可能是由于NiO:Na薄膜结晶度得到改善,薄膜内缺陷减少所致。继续增加O2/Ar+O2比例,薄膜结晶质量转差,相应也削弱了其整流特性,这一结果得到X射线衍射(XRD)、原子力显微镜(AFM)和紫外(UV)透射结果的充分支持。
NiO: Na thin films were fabricated on n-type Si substrates by magnetron sputtering to form heterogeneous pn junctions, and their photoelectric properties were studied. The experimental results show that when the ratio of O2 / Ar + O2 increases from 0% to 30%, the pn junction of Si / NiO: Na exhibits the best rectification characteristics. When the forward turn-on voltage reaches 4.9V and -7V, Current. This may be due to the improvement of the crystallinity of the NiO: Na film and the reduction of defects in the film. Continuing to increase the O2 / Ar + O2 ratio, the film quality deteriorates and the corresponding rectification properties are weakened. This result is fully supported by X-ray diffraction (XRD), atomic force microscopy (AFM) and UV transmission.