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采用金属有机化合物气相淀积法在(0001)取向的蓝宝石衬底上生长一层大约20nm厚的AlN缓冲层,在缓冲层上生长大约2μm厚、晶体质量良好的AlxGa1-xN外延层,通过深紫外光致发光法测量发光峰的能量Eg判断外延层中铝含量的均匀性,取样品均匀性良好的氮铝镓外延片进行卢瑟福背散射(RBS)实验,通过两个高能离子束实验室分别进行RBS随机谱分析,每个实验室测量六个样品,由分析软件拟合随机谱获得外延层中的xAl.并对样品的均匀性、堆积校准、计数统计、散射角、离子束能量与阻止截面等影响测量结果准确性的不确定度来源进行分析.结果表明,采用入射离子4He,能量为2000keV,散射角为165时,氮铝镓外延片中铝含量(x=0.8)的测量不确定度为2.0%,包含扩展因子k=2.
A 20 nm-thick AlN buffer layer was grown on a (0001) -oriented sapphire substrate by a metal organic compound vapor deposition method and an about 2 μm-thick AlxGa1-xN epitaxial layer with a good crystal quality was grown on the buffer layer to pass through the deep UV photoluminescence method to measure the energy of the emission peak Eg to determine the uniformity of the aluminum content in the epitaxial layer, taking samples of good uniformity of AlGaN epitaxial wafers for Rutherford backscattering (RBS) experiment, through two high-energy ion beam experiments Room RBS random spectrum analysis, six samples were measured in each laboratory, the analysis software to fit the random spectrum obtained epitaxial layer xAl. And sample uniformity, stacking calibration, counting statistics, scattering angle, ion beam energy And the section of the source of uncertainty that hinders the accuracy of the measurement results, etc. The results show that the aluminum content (x = 0.8) in the AlGaN epitaxial wafers is measured using incident ion 4He, an energy of 2000 keV and a scattering angle of 165 The uncertainty is 2.0%, including the spreading factor k = 2.