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低温下观察了弱耦合δ掺杂ＧａＡｓ超晶格的辐射复合发光．实验结果表明：除观察到基态的复合发光外，还观察到激发态的复合发光．基于有效质量近似理论，计算了能带结构和发光光谱，理论结果与实验结果符合得很好．
Radiation recombination luminescence of weakly coupled δ-doped GaAs superlattice was observed at low temperature. The experimental results show that besides the ground state recombination luminescence, the complex luminescence of the excited state is also observed. Based on the effective mass approximation theory, the energy band structure and luminescence spectra were calculated. The theoretical results agree well with the experimental results.