利用MBE的方法在晶格失配的GaAs衬底上制备了新型红外探测材料InAs0.07Sb0.93薄膜。并利用电子束刻蚀的方法在InAs0.07Sb0.93薄膜表面进行了电极的制备。使用标准黑体及傅里叶红外光谱仪对制备成的光电导器件的黑体响应、暗电流以及光电流谱进行了测试,结果表明,所制备的红外探测器获得了响应峰值为4μm、响应半峰宽为4μm的中波宽带响应。 A new type of infrared sensing material InAs0.07Sb0.93 thin film was prepared on the lattice mismatched GaAs substrate by MBE method. Electrode etching was performed on the surface of InAs0.07Sb0.93 thin film by electron beam lithography. The black body response, dark current and photocurrent spectrum of the prepared photoconductive device were tested by using standard blackbody and Fourier transform infrared spectrometer. The results show that the prepared infrared detector has a response peak value of 4μm and a half width of response 4μm wideband response in the wave.