Metal-semiconductor-metal photodetectors on semi-insulating Ga As with interdigital electrodes showed significant enhancement in the spectral response in the near-infrared region as the electrode spacing is reduced. The photocurrent for the device with 5 μm interdigital spacing is five orders of magnitude higher than the dark current, and the room temperature detectivity is on the order of 2.4 × 10~(12)cm Hz~(1∕2)W~(-1)at 5 V bias. Furthermore,the spectral response of this device possesses strong dependence on the polarization of incident light showing potential plasmonic effects with only microscale dimensions. These experimental data were analyzed using optical simulation to confirm the response of the devices. Metal-semiconductor-metal photodetectors on semi-insulating Ga As with interdigital electrodes showed significant enhancement in the spectral response in the near-infrared region as the electrode spacing is reduced. The photocurrent for the device with 5 μm interdigital spacings is five orders of magnitude higher than the dark current, and the room temperature detectivity is on the order of 2.4 × 10 ~ (12) cm Hz ~ (1/2) W ~ 5 at 5 V bias. possesses strong dependence on the polarization of incident light showing potential plasmonic effects with only microscale dimensions. These experimental data were analyzed using optical simulation to confirm the response of the devices.