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A MOSFET-based electrostatic discharge(ESD) power clamp circuit with only a 10 ns RC time constant for a 0.18-μm process is proposed.A diode-connected NMOSFET is used to maintain a long delay time and save area.The special structure overcomes other shortcomings in this clamp circuit.Under fast power-up events,the gate voltage of the clamp MOSFET does not rise as quickly as under ESD events,the special structure can keep the clamp MOSFET thoroughly off.Under a falsely triggered event,the special structure can turn off the clamp MOSFET in a short time.The clamp circuit can also reject the power supply noise effectively.Simulation results show that the clamp circuit avoids fast false triggering events such as a 30 ns/1.8 V power-up,maintains a 1.2 /μs delay time and a 2.14μs turn-off time,and reduces to about 70%of the RC time constant.It is believed that the proposed clamp circuit can be widely used in high-speed integrated circuits.
A MOSFET-based electrostatic discharge (ESD) power clamp circuit with only a 10 ns RC time constant for a 0.18-μm process is proposed. A diode-connected NMOSFET is used to maintain a long delay time and save area. other shortcomings in this clamp circuit. Undefender fast power-up events, the gate voltage of the clamp MOSFET does not rise as quickly as under ESD events, the special structure can keep the clamp MOSFET thoroughly off. Undefender falsely triggered event, the special The structure can turn off the clamp MOSFET in a short time. The clamp circuit can also reject the power supply noise effectively. Simulation results show that the clamp circuit avoids fast false triggering events such as a 30 ns / 1.8 V power-up, maintains a 1.2 / μs delay time and a 2.14μs turn-off time, and reduces to about 70% of the RC time constant. It is believed that the proposed clamp circuit can be widely used in high-speed integrated circuits.