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利用现有外延材料生长技术和器件工艺技术,生长了背照式AlxGa1-xN pin外延材料,并用生长的材料制作了日盲紫外探测器,测试结果表明器件在0V偏压下抑制比达到了6 400。在此基础上,较详细地分析了偏置电压、p-AlxGa1-xN载流子浓度和Al组分、极化效应对背照式AlxGa1-xN pin日盲紫外探测器抑制比的影响及非日盲光生载流子的限制机制。分析表明,提高p-AlxGa1-xN载流子浓度和GaN/AlxGa1-xN异质结极化强度是现有技术条件下提高器件抑制比的有效途径。
The back-illuminated AlxGa1-xN pin epitaxial material was grown by using the epitaxial material growth technology and device technology, and the solar-blind UV detector was made from the grown material. The test results show that the device achieves a rejection ratio of 6 at 0V bias 400. On this basis, the effects of bias voltage, p-AlxGa1-xN carrier concentration and Al composition, polarization effect on the rejection ratio of back-illuminated AlxGa1-xN pin solar-blind UV detector were analyzed in detail Limitation Mechanism of Blind Optical Carrier. The analysis shows that increasing the p-AlxGa1-xN carrier concentration and the polarization strength of the GaN / AlxGa1-xN heterojunction is an effective way to improve the device rejection ratio under the current state of the art.