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本文提供了利用5MeV电子辐照把硅外延晶体管改造成为开关晶体管的一种新方法,经各种例行工艺实验证明这种方法完全可以取代传统的掺金工艺.本文还利用深能级瞬息谱(DLTS)等方法研究了电子辐照引入该晶体管中缺陷的性质,发现了H(0.35)和H(0.41)能级.晶体管的等时退火特性表明这些缺陷在420℃以上的温度才能消失,这足以证明这些缺陷具有很好的热稳定性.
This article provides a new method to transform silicon epitaxial transistor into a switching transistor by using 5 MeV electron irradiation, and it is proved by various routine process experiments that this method can completely replace the traditional gold doping process.In this paper, (DLTS) were used to study the properties of H (0.35) and H (0.41) defects induced by electron irradiation.The isothermal annealing characteristics of the transistors indicated that these defects disappeared at a temperature above 420 ℃, This is sufficient to prove that these defects have good thermal stability.