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用一种新设计的反应器在InP衬底上生长InP及GaInAs层。对InP的生长参量已作了观察。对0.03≤x≤0.60的Ga_(1-x)In_xAs合金系进行了研究。生长了N_D—N_A=5×10~(17)cm~(-3)掺硫的GaInAs层。在室温下测量了组分与霍尔迁移率的关系。在InP衬底上已生长出⊿a/a<5×10~(-4)的优质Ga_(0.47)In_(0.53)As层;当N_D—N_A在10~(16)～2×10~(17)/cm~3范围时,300K与77K的迁移率分别是15000cm~2/V·s及28000cm~2/V·s。已经生长出界面宽度小于100(?)的非最优双异质结。
InP and GaInAs layers were grown on InP substrates using a newly designed reactor. The growth parameters of InP have been observed. The Ga_ (1-x) In_xAs alloy of 0.03≤x≤0.60 was investigated. A GaInAs layer doped with N_D-N_A = 5 × 10 ~ (17) cm ~ (-3) was grown. The relationship between the composition and the Hall mobility was measured at room temperature. Ga_ (0.47) In_ (0.53) As layer with ⊿a / a <5 × 10 ~ (-4) has been grown on InP substrate. When N_D-N_A is between 10 ~ (16) ~ 2 × 10 ~ 17) / cm ~ 3, the mobilities of 300K and 77K are 15000cm-2 / Vs and 28000cm-2 / Vs, respectively. Non-optimal double heterojunctions with interface widths less than 100 (?) Have been grown.