论文部分内容阅读
自1966年 C·A·Mead 提出肖特基势垒栅砷化镓场效应晶体管(以下称为 GaAsMES-FET)以来,经过精心的研究,其性能已有显著地改进,特别是近年来,随着以通信卫星为主的通信系统的进展,迫切地希望低噪声器件在 S～X 波段上的实用化。然而,过去这多半还是靠参量二极管、变容二极管以及双极晶体管来实现的。其主要原因则是GaAsMESFET 研制时间不长,缺乏关于其应用电路技术和器件可靠性等方面的经验。然而,随着这些问题的逐步明确,预期这种 GaAsMESFET 将在今后各个领域内得到广泛应用。本文将以1微米栅的 GaAsMESFET 为主,叙述 MESFET 的应用。
The performance of the Schottky barrier gate-gallium arsenide field-effect transistor (GaAsMES-FET), proposed by CM Mead in 1966, has been carefully studied and has been significantly improved. Especially in recent years, With the development of communication systems based on communication satellites, the practical application of low-noise devices in the S-X band is urgently desired. However, most of the past, it is by parametric diodes, varactor diodes and bipolar transistors to achieve. The main reason is GaAsMESFET development time is not long, the lack of application circuit technology and device reliability and other aspects of the experience. However, with the gradual clarification of these issues, it is expected that such GaAsMESFETs will be widely used in various fields in the future. This article will be 1 micron gate GaAsMESFET mainly described MESFET applications.