Characterization of Ge1Sb4Te7 Chalcogenide for its Application to Synaptic Device

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  Current digital computers with a classical von Neumann configuration are difficult to deal with some problems.For example,IBM team employed a super computer equipped with 147456 CPUs and 144 TB of main memory to perform certain cortical simulations at the cat scale even at 83 times slower firing rate.The conductance can be incrementally modified by controlling charge or flux through synaptic devices,.Some synaptic functions have been demonstrated using AgSi,Ag2S as an active layer.In this work,a chalcogenide Ge1Sb4Te7(GST)was characterized by X-ray diffraction and electrical measurements and incremental conductance change has also been demonstrated.
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