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用质子辐照ｐ型碲镉汞材料的方法成功地制备了ｎ－ｏｎ－ｐ型短波与中波光伏器件．其中中波器件的截止波长为６．５ｍｍ，黑体探测率达２．３ｘ１０１０ｃｍＨｚ１／２Ｗ－１，量子效率为２８％，其中Ｒ０Ａ达１５７·ｃＭ２。Ｃ－Ｖ特性研究发现其为突变结。噪声频谱表明在低频（＜３００Ｈｚ）时主要由１／ｆ噪声限制，在中频和高频时主要是白噪声限制。对辐照前后材料和器件的截止波长变化亦作出了初步解释。短波器件的电流电压特性表明器件在室温可承受１５Ｖ的反向偏压。
N-on-p short-wave and mid-wave photovoltaic devices were successfully prepared by proton irradiation of p-type HgCdTe materials. Among them, the cut-off wavelength of the middle wave device is 6.5mm, the detection rate of blackbody is 2.3x1010cmHz1 / 2W-1, the quantum efficiency is 28%, and the R0A reaches 157 · cM2. C-V characterization study found that it is a mutant junction. The noise spectrum indicates that it is mainly limited by 1 / f noise at low frequencies (<300 Hz) and mainly by white noise at medium and high frequencies. A preliminary explanation of the change of the cutoff wavelength of the materials and devices before and after irradiation is also given. The current-voltage characteristics of the shortwave devices show that the device can withstand a reverse bias of 15V at room temperature.