The Switch Mechanism of Solid-Electrolyte-Based Resistive Switching Memory

来源 :International Conference on Nanoscience & Technology,China 2 | 被引量 : 0次 | 上传用户：uto

【摘要】

：

Resistive switching memory (RRAM) based on a solid-elelctrolyte insulator is a promising nanoscale device and has great potentials in nonvolatile memory,analog circuits and neuromorphic application.A

【作者】

：

Ming Liu Qi Liu Shibing Long Hangbing Lv

【机构】

：

Laboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics

【出处】

：

International Conference on Nanoscience & Technology,China 2

【发表日期】

：

2013年3期

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　　Resistive switching memory (RRAM) based on a solid-elelctrolyte insulator is a promising nanoscale device and has great potentials in nonvolatile memory,analog circuits and neuromorphic application.A typical solid electrolyte-based RRAM (often called electrochemical metailization (ECM) memory) device is formed by an electrochemically active electrode (e.g.Cu or Ag)/solid electrolyte insulator/inert electrode (e.g.Pt or W)trilayer structure.

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The Switch Mechanism of Solid-Electrolyte-Based Resistive Switching Memory

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