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5. Optical and electrical Properties of ZnO: Al thin films prepared by plasma enhanced chemical vapor d

Optical and electrical Properties of ZnO: Al thin films prepared by plasma enhanced chemical vapor d

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：jiaolang

【摘 要】

：

AZO (ZnO∶Al) polycrystalline thin films are fabricated by plasma enhanced chemical vapor deposition (PECVD) method on silicon （100） substrates,followed by annealing in oxygen ambient from 400℃ to 900℃

【作 者】

：

Yingmin Luo Limin An Jie Yi Chunxia Liu Yi Luo Xueting Han 

【机 构】

：

School of Physics and Optoelectronic Engineering, Dalian University of Technology, Dalian, China

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

PECVD (plasma enhanced chemical vapor deposition) AZO (ZnO∶Al) thin films photol 

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AZO (ZnO∶Al) polycrystalline thin films are fabricated by plasma enhanced chemical vapor deposition (PECVD) method on silicon （100） substrates,followed by annealing in oxygen ambient from 400℃ to 900℃.

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